Microelectronics

Infineon and Siemens: Silicon carbide technology to advance electrical protection in data centers and factories

June 8, 2026. Infineon Technologies AG and Siemens AG are working together to improve electrical protection in data centers, production facilities and battery storage systems to ensure reliable operation. As part of the collaboration, Siemens is using silicon carbide (SiC) power modules from Infineon for its SENTRON 3QD2 semiconductor power switch. This increases the efficiency, power density and reliability of the Siemens protection solution.

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The Siemens SENTRON 3QD2 uses semiconductor components and intelligent protection algorithms to protect circuits from damage caused by excessive current flow. Photo: Siemens AG

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“AI data centers and factories are becoming increasingly electrified and more complex. This increases vulnerability to electrical faults and drives the demand for more sustainable, efficient and reliable power distribution systems,” said Andreas Weisl, Executive Vice President and Chief Sales Officer Industrial & Infrastructure at Infineon. “By combining our advanced silicon carbide technology with Siemens’ expertise in power distribution, we are addressing this need to ensure fast, safe and reliable operation of critical infrastructure.”

A semiconductor circuit breaker, also known as a solid-state circuit breaker, is a semiconductor circuit breaker that protects circuits from damage caused by excessive current flow, such as that caused by short circuits or overloads. In contrast to conventional electromechanical circuit breakers, which rely on mechanical components to interrupt the current flow and typically operate in the millisecond range, the Siemens SENTRON 3QD2 uses semiconductor components and intelligent protection algorithms for this function. This enables ultra-fast shutdown in the microsecond range, up to 1,000 times faster than conventional systems. This capability is essential for direct current (DC) grids and significantly improves protection and system availability. This is critical in applications such as industrial manufacturing or AI data centers, where even slight delays in the event of power failures can lead to expensive downtime, data loss or costly hardware damage.

“Our new DC portfolio offers innovative solutions that not only improve energy efficiency, but also enable the development of resilient, future-proof infrastructures,” says Markus Grabmeier, CEO Electrical Products at Siemens Smart Infrastructure. “Direct current applications can lower energy consumption and significantly reduce the use of materials. The integration of battery storage systems can also significantly reduce peak power demand. With this approach, we are making a decisive contribution to the decarbonization of our industries and at the same time underlining our commitment to developing technologies that create tangible added value for our customers and society.”

The collaboration addresses the increasing demands of critical infrastructures where speed, precision and reliability are crucial. By integrating Infineon’s 62 mm CoolSiC™ 1200 V MOSFET module with Siemens’ advanced protection concepts, the companies are making an important contribution to more resilient, efficient and future-proof energy infrastructures. The joint approach supports the increasing penetration of DC grids and highly electrified environments and helps industrial and infrastructure operators to meet increasing demands for performance and reliability.

About Infineon 

Infineon Technologies AG is a leading global provider of semiconductor solutions for power systems and the Internet of Things (IoT). With its products and solutions, Infineon is driving decarbonization and digitalization. The company has around 57,000 employees worldwide (end of September 2025) and generated sales of around 14.7 billion euros in the 2025 fiscal year (end of September).

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Further links

👉 www.infineon.com  

Photo: Siemens AG

Contact info

Silicon Saxony

Marketing, Kommunikation und Öffentlichkeitsarbeit

Manfred-von-Ardenne-Ring 20 F

Telefon: +49 351 8925 886

redaktion@silicon-saxony.de