Company type
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Fraunhofer Institut für Integrierte Systeme und Bauelementetechnologie (IISB) / Fraunhofer Technologiezentrum Hochleistungsmaterialien (THM)
Research institution
Target markets
Electronics·Infrastructure·Machinery and Equipment·Mobility
Industries
Research & Development
Portfolio
Energy Systems·Environmental Technoloy·III-V Substrates·Material Characterization·Material Research·Micro- / Nanoelektronics·R&D Centres·Research Institutes·Semiconductor Industry
Certificates
Contact
Am St.-Niclas-Schacht 13
09599 Freiberg
09599 Freiberg
+49-3731-2033-121
Contact Person
Dr. Franziska Beyer
03731-2033-103
Gruppenleiterin
About this member
High-performance materials such as semiconductors and energy materials are fundamental when it comes to solving the major challenges of the future: intelligent mobility, Industry 4.0, the energy transition and the Internet of Things. The development of new, high-performance materials and the associated efficient manufacturing processes play a major role here, as does a sustainable circular economy that enables the economic recovery of recyclable materials. Fraunhofer THM is a partner to companies within the scope of industrial contracts and publicly funded projects in the production, application and recycling of semiconductor and energy materials.
Funded by the Free State of Saxony, Fraunhofer THM is a research and transfer platform of the Fraunhofer Institute for Integrated Systems and Device Technology IISB and the Fraunhofer Institute for Ceramic Technologies and Systems IKTS. Together, semiconductor and energy materials are transferred into new applications and at the same time future material recycling is considered and developed.
Semiconductor Characterisation and first test devices
The Spectroscopy and Test Devices Group at the Fraunhofer IISB site in Freiberg focuses in particular on the characterization, fabrication, and process development of devices based on wide-bandgap semiconductors.
We provide extensive expertise in characterizing the electrical properties of various crystal and wafer materials, as well as partially and fully processed devices. This enables us to perform service measurements with a short turnaround time for our clients. Additionally, we leverage this toolkit, particularly the capability to fabricate various test devices, to identify critical defects affecting the performance and reliability of the components, understand their origins, and collaborate with our clients to find solutions to mitigate these critical defects.
Based on a comprehensive defect-spectroscopic characterization of semiconductor materials (notably GaN, SiC, AlGaN, AlN, GaAs, and InP), test devices can be produced and characterized at an early stage of material development in partnership with the Institute of Applied Physics at TU Bergakademie Freiberg. This facilitates a systematic correlation between material properties and the resulting device characteristics, as well as the identification of defects critical to the devices.
Additionally, the IISB branch in Freiberg allows for addressing custom queries related to process development and the design of test devices. In our flexible, fully CMOS-integrated cleanroom facility, we can both individually adapt processes and correlate material properties with device performance to identify critical material defects.
