Power semiconductors based on GaN are rapidly gaining ground in the fields of industry, automotive and consumer, computing and communication applications (“Consumer, Computing & Communications”). Examples include power supplies for AI systems, solar inverters, chargers and adapters as well as motor control systems. State-of-the-art GaN manufacturing processes improve the performance of the components, enabling higher efficiency, smaller size and weight and lower overall costs for end customer applications. In addition, 300-millimeter manufacturing ensures customers excellent supply stability through scalability.
“This remarkable achievement is the result of our innovative strength and the dedicated work of our global team and underlines our position as an innovation leader in GaN and power systems,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “This technological breakthrough will transform the industry and help us realize the full potential of gallium nitride. Less than a year after the acquisition of GaN Systems, we are proving once again that we are determined to take a leading role in the fast-growing GaN market. As a leading supplier of power systems, Infineon masters all three relevant materials: silicon, silicon carbide and gallium nitride.”
Infineon has succeeded in producing 300-millimeter GaN wafers on an integrated pilot line in the existing 300-millimeter silicon production facility in the Power Fab in Villach (Austria). The company is using its established expertise in 300-millimeter silicon and 200-millimeter GaN production. Infineon will continue to expand its GaN capacities in line with market requirements. The 300-millimeter GaN production will enable Infineon to shape the growing GaN market, which is estimated to reach several billion US dollars by the end of the decade.
The outstanding technological success underlines Infineon’s position as the world’s leading semiconductor company in the field of power systems and the Internet of Things (IoT). With a 300-millimeter GaN technology and the associated cost efficiency as well as the ability to address the full range of customer systems, Infineon strengthens existing and enables new solutions and application fields. Infineon will present the first 300-millimeter GaN wafers to the public at the electronica industry trade fair in Munich in November 2024.
A key advantage of 300-millimeter GaN technology is that it uses existing 300-millimeter silicon manufacturing equipment, as gallium nitride and silicon are very similar in the manufacturing processes. Infineon’s existing 300-millimeter silicon production lines are ideal for launching a reliable GaN technology and enabling accelerated adoption and efficient use of capital. Fully scaled 300-millimeter GaN production will help bring the cost of GaN in line with silicon in terms of R DS(on) metrics – meaning cost parity for comparable Si and GaN products.
The 300-millimeter GaN technology is another milestone in Infineon’s strategic innovation leadership and supports the goal of decarbonization and digitalization.
About Infineon
Infineon Technologies AG is a leading global semiconductor manufacturer for energy systems and IoT. With its products and solutions, Infineon is driving decarbonization and digitalization. The company employs around 58,600 people worldwide and generated revenue of around €16.3 billion in the 2023 fiscal year (ending September 30).
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Further links
👉 www.infineon.com
Photo: Infineon
