As the market leader in power electronics, Infineon has mastered all three relevant materials: silicon (Si), silicon carbide (SiC) and gallium nitride. With higher power density, faster switching times and lower power losses, GaN semiconductors enable smaller designs and reduce energy consumption and heat generation in electronic devices such as smartphone chargers, industrial and humanoid robots or solar inverters.
“With fully upscaled 300-millimeter GaN manufacturing, we will be able to deliver the highest quality to our customers even faster, while moving towards cost parity for comparable silicon and GaN products,” says Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “Almost a year after the announcement of Infineon’s breakthrough in 300-millimeter GaN wafer technology, we are pleased that our transition process is fully on track. The industry has recognized the importance of Infineon’s GaN technology, which is enabled by the strength of our IDM strategy.”
Infineon’s manufacturing strategy is primarily based on an IDM model, where the company owns the entire semiconductor manufacturing process, from design to fabrication and sale of the final product. The company’s in-house manufacturing strategy is a key differentiator in the market, offering benefits such as high quality, faster time-to-market and unique design and development flexibility. Infineon has a clear goal to support its GaN customers and can provide the capacity to meet current customer needs for reliable and high-quality GaN power products.
Building on its technology leadership position, Infineon is the first semiconductor manufacturer to successfully develop power wafer technology at 300 millimeters within its existing high-volume manufacturing infrastructure. Chip production on 300-millimeter wafers is technically more advanced and significantly more efficient than on established 200-millimeter wafers. The larger wafer diameter makes it possible to produce 2.3 times more chips per wafer. This know-how, combined with Infineon’s outstanding team of GaN experts and the broadest IP portfolio in the industry, is required as GaN power semiconductors are increasingly used in industrial and automotive applications. Other GaN target applications include consumer, computing and communication applications such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.
Market analysts expect GaN sales for power applications to grow by 36 percent per year to around 2.5 billion US dollars by 2030 [1]. Infineon’s dedicated manufacturing capabilities and strong portfolio, with more than 40 new GaN product announcements in the last year, make the company a preferred partner for customers looking for high-quality GaN solutions.
[1] Yole Group; Power SiC and GaN Compound Semiconductor Market Monitor, Q2 2025
About Infineon
Infineon Technologies AG is a leading global provider of semiconductor solutions for power systems and the Internet of Things (IoT). With its products and solutions, Infineon is driving decarbonization and digitalization. The company has around 58,060 employees worldwide (end of September 2024) and generated sales of around 15 billion euros in the 2024 financial year (end of September).
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Further links
👉 www.infineon.com
Photo: Infineon
