Microelectronics

Fraunhofer IPMS: Development of groundbreaking and energy-efficient AI with innovative ferroelectric technology

May 22, 2025. As artificial intelligence (AI) is increasingly used in sectors such as healthcare, autonomous driving and smart cities, conventional computer architectures are reaching significant limits in terms of processing speed and energy efficiency. The “ViTFOX” project brings together eight partners from Europe and Korea to develop a breakthrough vision transformer architecture based on ferroelectric oxide that enables a significant reduction in energy consumption and latency. Unlike conventional architectures, which often rely on separate memory and processing units, ViTFOX aims to integrate data processing directly into the memory, achieving improved energy efficiency of 50 TOPS/W. The European Union is funding the project with 1.5 million euros.

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Synergies and complementary competencies between the ViTFOX consortia of the EU and Korea. Graphic: ETH Zurich

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Conventional computer architectures are limited in terms of processing speed and energy efficiency when dealing with the huge amounts of data generated in today’s digital landscape. Neuromorphic systems, systems that mimic the way the human brain works, use specialized hardware, such as ferroelectric devices, to perform computations more efficiently, enabling real-time processing and decision making. This approach not only boosts the performance of AI applications such as image recognition and natural language processing, but also reduces energy consumption, making it a sustainable solution for future technologies.

The ViTFOX project is at the forefront of advancing AI through the development of energy-efficient neuromorphic computing systems. At the heart of the ViTFOX project is the Vision Transformer (ViT) architecture, which is designed to perform complex AI computations while consuming less energy. Vision Transformers are a type of neural network architecture that processes visual data more effectively than conventional methods. The project aims to develop a ViT that utilizes ferroelectric oxide materials to achieve exceptional energy efficiency of over 50 TOPS/W. This threshold is critical for AI-powered edge applications. “We aim to push the boundaries of current technology by developing hardware-software co-optimization platforms, novel materials and integration methods. These can not only improve AI performance, but also ensure sustainable energy consumption,” says Prof. Dr. Thomas Kämpfe, project manager at Fraunhofer IPMS, one of the partners in the consortium. “We want to make an important contribution to the semiconductor industry by addressing both the technical challenges of new memory technologies and the societal need for efficient computing solutions,” he adds.

Collaboration between Europe and Korea to significantly improve the state of the art

In total, the ViTFOX consortium consists of eight partners from leading research institutions, universities and technology development labs from Europe and Korea. The project aims to strengthen the leading position of the EU and Korea in the field of silicon-compatible hafnium-based ferroelectric electronics. The field has already seen much pioneering work within Europe and has now attracted great interest from Korean researchers. The project will advance the technology beyond the current state, along the entire value chain from materials and devices, to heterogeneous and monolithic integration and the design and simulation of ViT circuits and systems. The project is of particular importance as it benefits from recent advances in ferroelectric materials, especially hafnium zirconium oxide (HZO). As it has been shown to be compatible with conventional silicon devices, it represents a promising approach for improving memory devices and reducing power consumption.

Three of the project objectives are focused on the development and fabrication of the main components of the ViT. A compute-in-memory demonstrator, a circuit-level simulator and a platform for joint optimization of hardware and software with ferroelectric oxides are planned. The platform will support two types of new memories: the high-density 3D FeRAM developed in Korea and the epitaxial ferroelectric tunnel junctions developed in Europe. The close collaboration will enable the partners to combine their joint expertise in materials science, semiconductor technology and artificial intelligence to push the boundaries of this emerging field. More information about the collaboration can be found on the official project website www.vitfox.eu.

Fraunhofer IPMS in the project

Fraunhofer IPMS is a key partner in the ViTFOX project, contributing its extensive expertise in neuromorphic systems and semiconductor technologies. Fraunhofer IPMS focuses on the development of advanced materials and devices for neuromorphic computing applications, in particular using ferroelectric materials. This includes the design and testing of novel ferroelectric tunnel junctions (FTJs) and the integration of these devices into functional prototypes. By using its state-of-the-art clean room, Fraunhofer IPMS aims to facilitate the scaling and optimization of ferroelectric technologies and ensure that they meet the stringent requirements for energy-efficient computer systems.

Project partners

  • ETH Zurich
  • Silicon Austria Labs
  • National Centre for Scientific Research Demokritos
  • Seoul National University
  • Hanyang University (Korea)
  • Kookmin University
  • Soongsil University 

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Further links

👉 www.ipms.fraunhofer.de

Graphic: ETH Zurich

Contact info

Silicon Saxony

Marketing, Kommunikation und Ă–ffentlichkeitsarbeit

Manfred-von-Ardenne-Ring 20 F

Telefon: +49 351 8925 886

Fax: +49 351 8925 889

redaktion@silicon-saxony.de

Contact person: