February 25, 2026. WIBASE, “Wide Bandgap Semiconductor Power Electronics”, is a Finnish initiative to promote wide-bandgap semiconductor technologies for next-generation power engineering. The project builds national competencies in wide-bandgap device processing, prototyping, integration, packaging, testing and lifetime modeling to support the transition to more efficient and sustainable power conversion.
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The consortium is coordinated by the VTT Technical Research Center and comprises ten partners, including six companies and four leading Finnish research institutions. The industrial partners cover the entire value chain, from advanced materials, thin-film know-how and engineered silicon substrates to power electronics applications.
The three-year project addresses key challenges hindering the adoption of wide bandgap technologies, including device and module reliability, material defects, thermal management and high-temperature interconnects. WIBASE promotes close collaboration with leading international research groups and supports the development of technologies, know-how and intellectual property in the field of wide bandgap performance technologies. The project is funded by Business Finland.
GaN-on-Si is an important wide bandgap technology that combines the high electron mobility, thermal stability and high-voltage capability of gallium nitride with the scalability and cost-effectiveness of silicon. Silicon substrates enable large wafer sizes, stable supply and reliable mass production. GaN-on-Si also offers potential life cycle and energy efficiency benefits that are valued in the fields of e-mobility, renewable energy and industrial power electronics.
Okmetic is working with WIBASE partners to develop and characterize optimized silicon substrates for GaN power devices. Based on our experience in supplying power GaN substrate wafers, we aim to provide a reliable, well-controlled silicon platform that meets the performance and manufacturability requirements of next-generation wideband power technologies.
WIBASE will contribute to building a cluster of excellence in wide bandgap power electronics. It supports Finland’s technological self-reliance, strengthens the creation of intellectual property and improves the competitiveness of the semiconductor and power electronics industry. The results will also benefit the global power device sector through improved materials, advanced silicon substrates and manufacturing know-how.
Finnish partners in the WIBASE project include Okmetic, VTT, Aalto University, LUT University and the University of Helsinki, ABB, Picosun, Danfoss Drives, Comptek Solutions and Kempower.
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