SENTECH Instruments GmbH

The SENTECH SI 500 ICP-RIE System represents the leading edge for ICP processing in both research and industry. The system comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, a fully controlled vacuum system, and a very easy-to-operate user interface. Configurations for processing a variety of materials, including but not limited to III-V and II-VI compound semiconductors (GaAs, InP, GaN, InSb), dielectrics, quartz, glass, silicon, silicon compounds (SiC, SiGe), and metals, are achievable with this flexible and modular plasma etch system. The versatile and modular system can be configured for ALE, cryo, DRIE, RIE plus for multi-wafers and large substrates.

The SENTECH SI 500 D ICPECVD System represents the leading edge for inductively coupled plasma (ICP) processing in both research and industry for plasma-enhanced chemical vapour deposition of dielectric films, a-Si, SiC, and other materials. The system comprises the ICP plasma source PTSA, a dynamic temperature-controlled substrate electrode, and a fully controlled vacuum system. A large variety of substrates from 100 mm wafers up to 200 mm diameter, as well as substrates on carriers, can be handled by the flexible load lock built into the SENTECH SI 500 D. The single-wafer vacuum load lock and mechanical clamping guarantee stable conditions and allow for straightforward switching of processes.

SENTECH ALD Systems enable thermal and plasma-enhanced operation. Our ALD systems can be configured for oxide, nitride, 2D material deposition. 3D structures can be homogenously and conformally coated. With ALD, PECVD, and ICPECVD, SENTECH offers plasma deposition technology for depositing films from the nanometer scale up to several microns.

In-situ diagnostics by the AL Real Time Monitor enable ultra-high resolution of single ALD cycles. The advantages are confirmation of the ALD regime, reduction of process time, and total cost of ownership. Spectroscopic ellipsometry is provided as in-situ diagnostics, too, having specific advantages for our atomic layer deposition systems.

SENTECH Cluster Systems comprise plasma etch and/or deposition modules, a transfer chamber, and a vacuum load lock or cassette station. Transfer chambers, including handling robot are available with three to six ports. Up to two cassette stations can be used to increase the throughput. SENTECH Cluster Configurations can be used to process a large variety of substrates from 100 mm wafers up to 200 mm in diameter. The systems offer different levels of automation, ranging from vacuum cassette loading to a one-process chamber for up to a six-port cluster configuration, with different etch and deposition modules offering high flexibility and high throughput. All SENTECH Cluster Systems are controlled by advanced hardware and SIA operating software, with a client-server architecture. A well-proven, reliable programmable logic controller (PLC) is used for the real-time control of all components.

The SENTECH SENDURO accuva10 is a fully automated thin film quality control tool housed in a compact > 2 m² footprint, making it ideal for research or production cleanroom environments. It is a measurement tool for quality control in sensors, RF/power devices, SAW filters, and MEMS production. The tool provides reliable and precise measurement of thin film stacks, using spectroscopic reflectometry and ellipsometry. Wafers are loaded from standard cassettes, and recipes carry out the quality control measurements. The tool is designed to measure film thicknesses, control deposition processes by measuring refractive indices of thin films, and prepare surface trimming for filters.

The system offers the configuration flexibility to meet the requirements of production control and QC. The tool can be configured with µ-spot measurements in reflectometry and ellipsometry, and pattern recognition, which provides an accurate measurement location. All measurements can be combined with edge-grip technology.

The SENTECH SENresearch 4.0 uses fast FTIR ellipsometry for the NIR up to 2,500 nm or 3,500 nm, respectively. It provides the broadest spectral range with the best S/N ratio and the highest selectable spectral resolution. Silicon films up to 200 µm thickness can be measured. The measurement speed of FTIR ellipsometry compares to diode array configurations, which are also selectable up to 1,700 nm.