“We are pleased to partner with ROHM to further accelerate the establishment of SiC power switches in the market,” said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. “Our collaboration offers customers more choice and flexibility in design and sourcing, enabling the development of more energy-efficient applications that further drive decarbonization.”
“ROHM is committed to providing the best possible solutions to its customers. Our collaboration with Infineon is an important step in this journey as it expands the solution possibilities,” says Dr. Kazuhide Ino, Member of the Executive Board, Managing Executive Officer, responsible for the Power Devices business at ROHM. “Together, we can drive innovation, reduce complexity, increase customer satisfaction and help shape the future of power electronics.”
Under the agreement, ROHM will acquire Infineon’s innovative top-side cooling platform for SiC, including the TOLT, D-DPAK, Q-DPAK, Q-DPAK dual and H-DPAK packages. Infineon’s top-side cooling platform offers numerous advantages, including a standard height of 2.3 mm for all packages. This simplifies design and reduces cooling costs, enables more efficient board space utilization and up to twice the power density.
At the same time, Infineon will develop a compatible product based on ROHM’s DOT-247 package with SiC half-bridge configuration. Infineon is thus expanding its recently announced double TO-247 IGBT portfolio with SiC half-bridge solutions. ROHM’s advanced DOT-247 package offers higher power density and reduces assembly complexity compared to standard single packages. The unique structure, which integrates two TO-247 packages, reduces thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. These advantages enable a 2.3-fold power density.
Infineon and ROHM plan to extend their cooperation to other packages for silicon and wide-bandgap power semiconductor technologies such as SiC and gallium nitride (GaN) in the future. In doing so, the two companies aim to further strengthen their cooperation and offer customers an even wider choice of solutions and sources.
SiC-based semiconductors improve high-performance applications by switching power more efficiently, offering high reliability and robustness under extreme conditions and enabling more compact designs. With Infineon and ROHM’s SiC products, customers can develop energy-efficient solutions and increase power density in applications such as electric vehicle chargers, renewable energy systems and AI data centers.
About ROHM
ROHM, a leading manufacturer of semiconductors and electronic components, was founded in 1958. From the automotive and industrial equipment markets to the consumer and communications sectors, ROHM supplies ICs, discrete devices and electronic components of the highest quality and reliability through a worldwide distribution and development network. ROHM’s strengths in the analog and power markets enable us to offer optimized solutions for entire systems, combining peripheral components (e.g. transistors, diodes, resistors) with the latest SiC power devices as well as driver ICs to maximize their performance.
About Infineon
Infineon Technologies AG is a leading global provider of semiconductor solutions for power systems and the Internet of Things (IoT). With its products and solutions, Infineon is driving decarbonization and digitalization. The company has around 58,060 employees worldwide (end of September 2024) and generated revenue of around €15 billion in the 2024 financial year (end of September). Infineon is listed in Frankfurt under the symbol “IFX” and in the USA on the OTCQX International market under the symbol “IFNNY”.
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Further links
👉 www.infineon.com
👉 www.rohm.com
Photo: Infineon
