The recent market launch of GaN-based fast chargers underlines the potential of GaN technology for power electronics applications. Thanks to continued advances in GaN epitaxy, GaN device and IC fabrication, reliability and robustness, and system-level optimization, GaN technology is poised to enable a new generation of power electronics products.
These will come to market with reduced form factors, lower weight and superior power conversion efficiency compared to Si-based solutions. Examples include on-board chargers and DC/DC converters for automotive applications, inverters for solar panels and power distribution systems for telecom and AI data centers – areas where GaN-based devices are contributing to the overall decarbonization, electrification and digitalization of society.
A notable trend in the development of GaN technology is the move to larger wafer diameters, with capacity currently mainly available at 200 mm. With the launch of its 300mm GaN program, imec is taking the next step and building on its 200mm expertise.
Stefaan Decoutere, Fellow and Program Director of the GaN Power Electronics Program at imec: “The benefits of moving to 300mm wafers go beyond scaling production and reducing manufacturing costs. Our CMOS-compatible GaN technology now has access to state-of-the-art 300mm facilities that allow us to develop more advanced GaN-based power devices. Examples include aggressively scaled, low-voltage p-GaN gate HEMTs for use in point-of-load converters that support energy-efficient power distribution for CPUs and GPUs.”
The 300mm GaN program will initially establish a basic lateral p-GaN HEMT technology platform for low-voltage applications (100V and above) using 300mm Si(111) as a substrate. To this end, process modules are currently being developed that focus on etching p-GaN and forming ohmic contacts. High-voltage applications are to be added later. For 650 V and more, 300 mm semiconductor specifications and CMOS-compatible QST® substrates (a material with a polycrystalline AlN core) are used in the developments. During development, control over the curvature of the 300mm wafers and their mechanical strength is paramount.
The launch of the 300mm GaN program follows successful 300mm wafer handling tests and mask set development. Imec expects to have full 300mm capacity installed in its 300mm cleanroom by the end of 2025.
“The success of 300mm GaN development also depends on the ability to build a robust ecosystem and drive innovation together, from 300mm GaN growth and process integration to packaging solutions,” adds Stefaan Decoutere. “We are therefore pleased to announce AIXTRON, GlobalFoundries, KLA Corporation, Synopsys and Veeco as the first partners in our open R&E program for 300mm GaN and hope to welcome more partners soon. This is because the development of advanced GaN power electronics requires a tight integration between design, epitaxy, process integration and applications – an integration that has proven critical to our pioneering work with 200 mm GaN.”
About imec
Imec is a world-leading research and innovation center for nanoelectronics and digital technologies. Imec leverages its state-of-the-art R&E infrastructure and its team of more than 6,000 employees and top researchers for research and development in advanced semiconductor and system scaling, silicon photonics, artificial intelligence, 5G communications and sensor technologies, as well as in application areas such as health and life sciences, mobility, Industry 4.0, agri-food, smart cities, sustainable energy, education, etc.
Imec brings together global leaders in the semiconductor value chain, Flanders-based and international technology, pharma, medical and ICT companies, start-ups, academic institutions and knowledge centers. Imec is headquartered in Leuven (Belgium) and has research sites in Belgium, the Netherlands, the UK and the US as well as offices on three continents. In 2024, imec’s turnover (P&L) amounted to a total of 1.034 billion euros.
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Further links
👉 www.imec-int.com
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