EUROSOI-ULIS 2026

12th JOINT EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON

About the Event

On behalf of the Organizing Committee, it is a great pleasure to welcome you to the 12th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2026), which will be held from May 20 to 22, 2026, in Granada, Spain.

The Joint EuroSOI-ULIS International Conference is an annual event that has been running since 2013. Past conferences in this series have been held in Athens, Greece (2017); Granada, Spain (2018); Grenoble, France (2019); Caen, France (virtual, 2020); Caen, France (2021); Udine, Italy (2022); Tarragona, Spain (2023); Athens, Greece (2024); and Warsaw, Poland (2025). This year, the conference returns to Spain, to the city of Granada, after eight years.

This conference aims to bring together scientists and engineers in an interactive forum to discuss SOI technology and advanced microelectronic devices. A key objective is to foster collaboration and partnerships among academia, research institutions, and industry stakeholders in the field.

We warmly invite students and researchers from both academic and industrial backgrounds to submit their abstracts and join us in Granada. The conference offers a valuable opportunity to engage with colleagues, share knowledge, and experience the charm of this marvelous city.

High quality contributions in the following areas are solicited:

• Advanced SOI materials and structures, innovative SOI-like devices.
• Alternative transistor architectures (FDSOI, Nanowire, Nanosheet, FinFET, MuGFET, vertical MOSFET, FeFET and TFET, MEMS/NEMS, Beyond-CMOS).
• New channel materials for CMOS (strained Si/Ge, III-V, carbon nanotubes; graphene and other 2D materials).
• Properties of ultra-thin semiconductor films and buried oxides, defects, interface quality; thin gate dielectrics: high-κ and ferroelectric materials for switches and memory.
• New functionalities and innovative devices in the More than Moore domain: nanoelectronic sensors, biosensor devices, memrisors, neuromorphic computing devices, quantum computing devices, energy harvesting devices, RF devices, imagers, integrated photonics (on SOI), etc.
• Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
• CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling; three-dimensional integration of devices and circuits, heterogeneous integration.
• Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
• Memory devices, memristors, hardware for unconventional computing such as neuromorphic, in-memory, in-sensor and quantum computing.