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As edge AI, automotive, and IoT devices continue to demand unprecedented amounts of data, on-chip memory has become a critical bottleneck and often occupies the majority of the chip area. Developers are seeking innovative on-chip memory solutions that offer higher storage density and lower power consumption compared to off-the-shelf SRAM.<\/p>\n
Utilizing RAAAM\u2019s patented GCRAM technology, the companies jointly developed the GCRAM bit cell using \u201cenhanced\u201d design rules based on FDX technology, achieving a 40% reduction in memory area and up to a 60% reduction in power consumption compared to SRAM. The companies have jointly developed a GCRAM test chip and put it into production. In the next step, the companies will begin granting leading customers access to the GCRAM design in early 2027.<\/p>\n
\u201cThe successful tape-out of our GCRAM prototype on GF\u2019s FDX platform demonstrates the strong synergy between RAAAM\u2019s memory innovations and GlobalFoundries\u2019 outstanding manufacturing expertise,\u201d said Robert Giterman, CEO and co-founder of RAAAM Memory Technologies. “Our GCRAM technology enables semiconductor companies to significantly increase their on-chip memory capacity or reduce silicon area while maintaining the same amount of on-chip memory. At the same time, the extremely low leakage current of FD-SOI technology extends data retention time, enabling developers to achieve significant power savings for edge AI devices.”<\/p>\n
\u201cAt GlobalFoundries, we are continuously pushing the boundaries of what\u2019s possible on our FDX platform and steadily expanding our IP portfolio to meet our customers\u2019 needs,\u201d said Sudipto Bose, Vice President of FD-SOI Product Management at GlobalFoundries. “The partnership with RAAAM Memory Technologies enables us to offer our customers a highly compelling on-chip memory solution that redefines the power, performance, and area (PPA) ratio for advanced AI and other applications.”<\/p>\n
The semiconductor industry is already recognizing the potential of this joint development. NXP Semiconductors, a leading provider of intelligent edge systems, is currently conducting an in-depth evaluation of the benefits of the GCRAM solution.<\/p>\n
\u201cThe industry needs a paradigm shift in on-chip memory. The GCRAM solution developed by RAAAM and GF offers immense potential,\u201d said Victor Wang, Vice President of Front-End Innovation at NXP Semiconductors. “The projected reduction in area and power consumption offers a clear path to increasing on-chip memory capacities, which is critical for reducing data transfer off-chip and achieving greater efficiency at the system level.”<\/p>\n
GlobalFoundries (GF) is a leading manufacturer of essential semiconductors that enable the widespread deployment of AI from the cloud to the physical world. Through close partnerships with customers, GF delivers differentiated, energy-efficient, and high-performance solutions for the automotive, aerospace, and defense industries, data centers, smart mobile devices, the Internet of Things, and other high-growth markets. With manufacturing facilities worldwide in the U.S., Europe, and Asia, GF is a trusted, end-to-end technology partner for customers around the globe. GF\u2019s talented, global team focuses every day on safety, longevity, and sustainability.<\/p>\n
RAAAM Memory Technologies is a fabless semiconductor IP company that offers the industry\u2019s most cost-effective on-chip memory technology. RAAAM\u2019s patented Gain-Cell RAM (GCRAM) technology enables a reduction in silicon area of up to 50% compared to conventional SRAM and a reduction in power consumption in power-saving mode by up to a 3:1 ratio. GCRAM can be used in SoCs as a direct replacement for SRAM and is fully compatible with standard CMOS manufacturing processes. This allows developers to integrate more memory into a smaller chip area while reducing power consumption in power mode.<\/p>\n
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\ud83d\udc49 https:\/\/gf.com<\/a> Photo: unsplash<\/i><\/p>\n","protected":false},"excerpt":{"rendered":" September 2, 2026. GlobalFoundries (Nasdaq: GFS) (GF) and RAAAM Memory Technologies, a pioneer in advanced on-chip memory solutions, today announced a strategic collaboration to develop and qualify Gain-Cell RAM (GCRAM) technology. The partnership has reached a major milestone with the successful tape-out of a GCRAM test chip on GF\u2019s industry-leading FDX\u2122 FD-SOI platform.<\/p>\n","protected":false},"author":3,"featured_media":0,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"inline_featured_image":false,"footnotes":"","_links_to":"","_links_to_target":""},"categories":[4818],"tags":[1954,4783],"class_list":["post-545265","post","type-post","status-publish","format-standard","hentry","category-microelectronics","tag-research-development","tag-semiconductors"],"acf":[],"yoast_head":"\n
\ud83d\udc49 www.raaam-tech.com<\/a> <\/p>\n