{"id":351328,"date":"2024-12-10T11:12:56","date_gmt":"2024-12-10T10:12:56","guid":{"rendered":"https:\/\/silicon-saxony.de\/globalfoundries-progress-in-gan-chip-production-with-9-5-million-us-dollars-in-funding\/"},"modified":"2024-12-10T11:12:56","modified_gmt":"2024-12-10T10:12:56","slug":"globalfoundries-progress-in-gan-chip-production-with-9-5-million-us-dollars-in-funding","status":"publish","type":"post","link":"https:\/\/silicon-saxony.de\/en\/globalfoundries-progress-in-gan-chip-production-with-9-5-million-us-dollars-in-funding\/","title":{"rendered":"GlobalFoundries: Progress in GaN chip production with 9.5 million US dollars in funding"},"content":{"rendered":"<p><img decoding=\"async\" style=\"width: 25%;\" src=\"https:\/\/cdn.pblzr.de\/dacbb27c-1270-4041-b681-e2b95f06f8a1\/2024\/12\/globalfoundries-logo-400x300_TEXT.jpg\"><\/p>\n<p>With the award, GF will expand its market-leading GaN IP portfolio and reliability testing with new tools, equipment and prototyping capabilities as the company moves closer to volume production of its 200mm GaN chips in Vermont. GF is committed to providing its customers with a fast and efficient path to realize new innovative designs and products that leverage the unique efficiency and power management advantages of GaN chip technology.<\/p>\n<p>&#8220;GF is proud of its leadership position in GaN chip technology, which is poised to deliver breakthrough advances in multiple end markets and enable new generations of devices with more energy-efficient RF performance and faster-charging, longer-lasting batteries,&#8221; said Nicholas Sergeant, vice president of IoT and Aerospace and Defense at GF. &#8220;We appreciate the partnership with the U.S. government and their continued support of our GaN program. Realizing full-scale GaN chip manufacturing will be a catalyst for innovation, both for our commercial and government partners, and will increase resilience and strengthen the semiconductor supply chain.&#8221;<\/p>\n<p>The new funding, awarded by the U.S. Department of Defense&#8217;s Trusted Access Program Office (TAPO), is the latest federal investment to support GF&#8217;s GaN program in Vermont.<\/p>\n<p>&#8220;This strategic investment in critical technologies strengthens our domestic ecosystem and national security, and ensures that these assets are readily available and secure for use by the Department of Defense. Working with key partners, this approach strengthens defense systems and increases resilience and responsiveness,&#8221; said Dr. Nicholas Martin, director of the Defense Microelectronics Division.<\/p>\n<p>In total, including the new grant, GF has received more than $80 million from the U.S. government since 2020 to support research, development and advancements, paving the way for full-scale GaN chip manufacturing.<\/p>\n<p>Vermont is a U.S.-accredited Trusted Foundry and the global center of GF&#8217;s GaN program, which has long been a leader in 200mm semiconductor manufacturing. In July 2024, GF acquired the gallium nitride power portfolio from Tagore Technology and established the GF Kolkata Power Center in Kolkata, India. The center is closely linked to and supports the GF facility in Vermont. It helps drive GF&#8217;s research, development and leadership in GaN chip manufacturing.<\/p>\n<h3 class=\"\">About GF <\/h3>\n<p>GlobalFoundries (GF) is a leading manufacturer of semiconductors that the world depends on to live, work and connect. We innovate and partner with our customers to deliver more energy-efficient and higher-performance products for the automotive industry, smart mobile devices, the Internet of Things, communications infrastructure and other high-growth markets. With our global manufacturing presence in the US, Europe and Asia, GF is a trusted and reliable source for customers around the world. Our talented and diverse team delivers results every day with a focus on safety, durability and sustainability. <\/p>\n<h3 class=\"\">Forward-looking information<\/h3>\n<p>This press release may contain forward-looking statements that involve risks and uncertainties. Readers are cautioned not to place undue reliance on these forward-looking statements. These forward-looking statements speak only as of the date of this press release. GF undertakes no obligation to update these forward-looking statements to reflect events or circumstances after the date of this press release or to reflect actual results, except as required by law.<\/p>\n<p>&#8211; &#8211; &#8211; &#8211; &#8211; &#8211;<\/p>\n<h4 class=\"\">Further links<\/p>\n<\/h4>\n<p>\ud83d\udc49 <a href=\"http:\/\/www.gf.com\" target=\"_blank\">www.gf.com<\/a> <br \/><i><br \/>Photo: pixabay<\/i><\/p>\n","protected":false},"excerpt":{"rendered":"<p>December 4, 2024. GlobalFoundries (Nasdaq: GFS) (GF) has received an additional $9.5 million in federal funding from the U.S. government to advance the production of gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. The funding brings GF closer to mass production of GaN chips. GaN chip technology is designed to handle high voltages and temperatures, enabling higher performance and energy efficiency in a range of RF and high-power control applications, including automotive, data centers, Internet of Things, aerospace and defense.<\/p>\n","protected":false},"author":3,"featured_media":0,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"inline_featured_image":false,"footnotes":"","_links_to":"","_links_to_target":""},"categories":[4818],"tags":[1975,4763,4762,4783],"class_list":["post-351328","post","type-post","status-publish","format-standard","hentry","category-microelectronics","tag-ecology-energy-transition","tag-mobility","tag-promotion","tag-semiconductors"],"acf":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.1.1 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>GlobalFoundries: Progress in GaN chip production with 9.5 million US dollars in funding - Silicon Saxony<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silicon-saxony.de\/en\/globalfoundries-progress-in-gan-chip-production-with-9-5-million-us-dollars-in-funding\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"GlobalFoundries: Progress in GaN chip production with 9.5 million US dollars in funding - Silicon Saxony\" \/>\n<meta property=\"og:description\" content=\"December 4, 2024. GlobalFoundries (Nasdaq: GFS) (GF) has received an additional $9.5 million in federal funding from the U.S. government to advance the production of gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. The funding brings GF closer to mass production of GaN chips. 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