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MOSFETs are electrical semiconductor switches for a wide range of applications. Trench MOSFETs differ from so-called planar MOSFETs in their cell structure and performance. While the current flow in planar MOSFETs is initially horizontal, trench MOSFETs offer purely vertical channels. This results in a higher cell density per area, which in turn significantly reduces the losses in the chip during energy conversion and thus increases efficiency.<\/p>\n
“The energy transition and many other pressing challenges of our time can only be solved with technological progress,” says Jochen Hanebeck, CEO of Infineon Technologies AG. “It is therefore important to promote and reward innovations and make them visible in society. The German Future Prize is the most important national award that is presented with this goal in mind. The nomination is a great honor for us and proof of the successful research and development work at Infineon. I would like to congratulate all colleagues involved!”<\/p>\n
The newly developed CoolSiC\u2122 XHP\u21222 module family enables considerable energy savings, for example in industrial power generation in solar parks or wind turbines, in power transmission, and above all in end consumption, where high outputs in the megawatt range are required. A single locomotive with a silicon carbide drive system can save around 300 MWh per year compared to the previous silicon-based solution, which is roughly equivalent to the annual consumption of 100 single-family homes. Together with drive technology manufacturers and rail operators, Infineon is thus making an important contribution to decarbonization. At the same time, residents also benefit from the lower noise level of trains with SiC modules when they pass through a residential area.<\/p>\n
Thanks to numerous further developments in chip processing and design as well as contacting and module technology, the team led by Dr. Konrad Schraml, Dr. Caspar Leendertz (both Infineon) and Prof. Dr. Thomas Basler (TU Chemnitz) has brought the 3300V CoolSiC XHP2 high-performance module to series production readiness. With ten times greater reliability against thermomechanical stress and a significantly higher power density compared to silicon modules, the new silicon carbide module can also be used to electrify large drives in diesel locomotives, agricultural and construction machinery, aircraft and ships, which were previously reserved for fossil fuels. The significantly higher switching frequencies permitted by the new module are helpful here, as they enable a significant reduction in the weight and volume of the power converters in the application. <\/p>\n
“This nomination shows that climate change and sustainable resource consumption have become central aspects of our society,” says Dr. Peter Wawer, Division President Green Industrial Power (GIP) at Infineon. “Innovative energy solutions and power semiconductors are a core component in decarbonizing and combating climate change, as the expert jury of the Deutscher Zukunftspreis has recognized. I am proud that we at Infineon can make a significant contribution to a green future with pioneering technology.”<\/p>\n
Project manager Dr. Konrad Schraml: “For us as a development team, it is a matter close to our hearts to develop innovative chips that contribute to efficient energy consumption and thus also to green mobility on our planet. This nomination is a great recognition for my team, whose tireless efforts, expertise and passion for sustainability have made the technology breakthrough in silicon carbide possible.” <\/p>\n
On November 27, Federal President Frank-Walter Steinmeier will present the German Future Prize to the winning team in Berlin.<\/p>\n
Infineon Technologies AG is a leading global provider of semiconductor solutions for power systems and the Internet of Things (IoT). With its products and solutions, Infineon is driving decarbonization and digitalization. The company has around 58,600 employees worldwide and generated sales of around 16.3 billion euros in the 2023 financial year (end of September).<\/p>\n
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