{"id":18239,"date":"2023-05-08T13:28:06","date_gmt":"2023-05-08T11:28:06","guid":{"rendered":"https:\/\/silicon-saxony.de\/hzdr-concept-for-a-new-storage-medium-developed\/"},"modified":"2023-06-15T10:52:18","modified_gmt":"2023-06-15T08:52:18","slug":"hzdr-concept-for-a-new-storage-medium-developed","status":"publish","type":"post","link":"https:\/\/silicon-saxony.de\/en\/hzdr-concept-for-a-new-storage-medium-developed\/","title":{"rendered":"HZDR: Concept for a new storage medium developed"},"content":{"rendered":"

Using nanoscale quantum sensors, an international research team has succeeded in exploring certain previously uncharted physical properties of an antiferromagnetic material. Based on their results, the researchers developed a concept for a new storage medium published in the journal Nature Physics. The project was coordinated by researchers from the Department of Physics and the Swiss Nanoscience Institute at the University of Basel.<\/strong>
\n\"\"<\/p>\n

Antiferromagnets make up 90 percent of all magnetically ordered materials. Unlike ferromagnets such as iron, in which the magnetic moments of the atoms are oriented parallel to each other, the orientation of the magnetic moments in antiferromagnets alternates between neighboring atoms. As a result of the cancelation of the alternating magnetic moments, antiferromagnetic materials appear non-magnetic and do not generate an external magnetic field.<\/p>\n

Antiferromagnets hold great promise for exciting applications in data processing, as the orientation of their magnetic moment \u2013 in contrast to the ferromagnets used in conventional storage media \u2013 cannot be accidentally overwritten by magnetic fields. In recent years, this potential has given rise to the budding research field of antiferromagnetic spintronics, which is the focus of numerous research groups around the world.<\/p>\n

Quantum sensors provide new insights<\/em><\/strong>
In collaboration with the research groups of Dr. Denys Makarov of the Institute of Ion Beam Physics and Materials Research at the Helmholtz-Zentrum Dresden-Rossendorf and Prof. Denis D. Sheka (Taras Sevchenko National University of Kyiv, Ukraine), the team led by Prof. Patrick Maletinsky in Basel examined a single crystal of chromium(III) oxide (Cr2O3). This single crystal is an almost perfectly ordered system, in which the atoms are arranged in a regular crystal lattice with very few defects. "We can alter the single crystal in such a way as to create two areas (domains) in which the antiferromagnetic order has different orientations," explains Natascha Hedrich, lead author of the study.<\/p>\n

These two domains are separated by a domain wall. To date, experimental examinations of domain walls of this sort in antiferromagnets have only succeeded in isolated cases and with limited detail. "Thanks to the high sensitivity and excellent resolution of our quantum sensors, we were able to experimentally demonstrate that the domain wall exhibits behavior similar to that of a soap bubble," Maletinsky explains. Like a soap bubble, the domain wall is elastic and has a tendency to minimize its surface energy. Accordingly, its trajectory reflects the crystal\u2019s antiferromagnetic material properties and can be predicted with a high degree of precision, as confirmed by simulations performed by the researchers in Dresden.

Surface architecture determines trajectory<\/strong><\/em>
The researchers exploit this fact to manipulate the trajectory of the domain wall in a process that holds the key to the proposed new storage medium. To this end, Maletinsky\u2019s team selectively structures the surface of the crystal at the nanoscale, leaving behind tiny raised squares. These squares then alter the trajectory of the domain wall in the crystal in a controlled manner.<\/p>\n

The researchers can use the orientation of the raised squares to direct the domain wall to one side of the square or the other. This is the fundamental principle behind the new data storage concept: if the domain wall runs to the "right" of a raised square, this could represent a value of 1, while having the domain wall to the "left" could represent a value of 0.<\/p>\n

Through localized heating with a laser, the trajectory of the domain wall can be repeatedly altered, making the storage medium reusable.<\/p>\n

"Next, we plan to look at whether the domain walls can also be moved by means of electrical fields," Maletinsky explains. "This would make antiferromagnets suitable as a storage medium that is faster than conventional ferromagnetic systems, while consuming substantially less energy."<\/p>\n

Publication:<\/strong><\/em>
N. Hedrich, K. Wagner, O. V. Pylypovskyi, B. J. Shields, T. Kosub, D. D. Sheka, D. Makarov and P. Maletinsky, Nanoscale mechanics of antiferromagnetic domain walls, in Nature Physics, 2021 (DOI: 10.1038\/s41567-020-01157-0)<\/p>\n

Contact:<\/strong><\/em>
Prof. Patrick Maletinsky
University of Basel, Department of Physics, Swiss Nanoscience Institute
Phone: +41 61 207 37 63 | Email: patrick.maletinsky@unibas.ch <\/p>\n

Dr. Denys Makarov
Institute of Ion Beam Physics and Materials Research at HZDR
Phone: +49 351 260 3273 | Email: d.makarov@hzdr.de  <\/p>\n

Links<\/strong><\/em><\/p>\nwww.hzdr.de
\nImage: Departement Physik, Universit\u00e4t Basel<\/em><\/p>\n","protected":false},"excerpt":{"rendered":"

Using nanoscale quantum sensors, an international research team has succeeded in exploring certain previously uncharted physical properties of an antiferromagnetic material. Based on their results, the researchers developed a concept for a new storage medium published in the journal Nature Physics. 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